Researchers from the University of Tsukuba and UNISOKU have facilitated the development of easy-to-use, time-resolved scanning tunneling microscopy (STM) for measuring the movement of electrons in nanostructures at high temporal and spatial resolution. Current flow through semiconductors, and thus their performance, depends on the dynamics of charge carriers which can be more than 10 billion times faster than the millisecond range of the blink of an eye. Optical pump-probe (OPP) STM is the present state-of-the-art, essential method for measuring and imaging such dynamics in semiconductors. However, present means of measuring and imaging systems are too complicated for non-experts. The researchers introduced a mechanism to electrically control the laser oscillation to optimize the performance of the developed system.
Researchers from the University of Tsukuba and UNISOKU Co., LTD. have developed an easy-to-use and time-resolved scanning tunneling microscopy (STM) that measures the movement of electrons in nanostructures at high temporal and spatial resolution. The study, which was recently published in Scientific Reports, will be invaluable for optimizing nanostructure performance and facilitating technology development.
Semiconductors are essential components of modern energy, communication, and various other technologies. For decades, researchers have been working on tailoring the underlying nanostructure of semiconductors to optimize device performance. Current flow through semiconductors, and thus their performance, depends on the dynamics of charge carriers, which can be extremely fast. However, present means of measuring and imaging systems are too complicated for non-experts, requiring special techniques for data acquisition and interpretation.
Optical pump-probe (OPP) STM is the present state-of-the-art method for measuring and imaging such dynamics in semiconductors. The researchers sought to address ease of operation and use in this study. “OPP STM is an essential method for measuring photo-induced charge carrier dynamics in nanostructures, but requires technical advances to meet ultrafast observation needs,” explains Professor Hidemi Shigekawa, senior author.
The researchers reported particularly noteworthy techniques that helped optimize the performance of the developed system. They introduced a mechanism to electrically control the laser oscillation and developed a simple and effective method for aligning the laser beam on the STM tip. These techniques facilitated the measurement of carrier dynamics in a common semiconducting material.
With this new technology, researchers can measure and image the dynamics of charge carriers in semiconductors at high temporal and spatial resolution. This will be invaluable for optimizing nanostructure performance, facilitating technology development, and advancing our understanding of semiconductors.
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