ReRAM, short for Resistive RAM, is an innovative non-volatile memory technology that allows the structure of a storage cell to switch between a conductive low resistance and non-conductive high resistance states. This technology is regarded as a promising alternative to traditional flash memory due to its ability to provide faster read and write speeds and low power consumption.
In 2012, the University College of London (UCL) prototyped a ReRAM chip using silicon oxide, showcasing its immense potential to offer faster access times and significantly lower power consumption compared to traditional flash memory. However, commercial devices for ReRAM are yet to hit the market, despite being viewed as a memristor of the future.
FAQs
What is ReRAM?
ReRAM is a resistive random-access memory technology that allows for faster access times and lower power consumption compared to traditional flash memory.
What is the difference between ReRAM and traditional flash memory?
ReRAM technology has faster access times and lower power consumption compared to traditional flash memory. ReRAM chips also require less space compared to flash memory, which allows for memory devices to have a higher capacity.
When will ReRAM commercial devices be available for purchase?
Currently, there are no commercial ReRAM devices available for purchase. However, research and development in the field is ongoing as this technology continues to gain recognition as a potential memristor of the future.
Conclusion
ReRAM technology is still in the developmental stages. However, with its faster read and write speeds and lower power consumption, it is viewed as a promising alternative to traditional flash memory technology. As the technology continues to develop, it is expected to revolutionize the current memory industry and create new opportunities in various technological fields.
